s m d ty p e m o s f e t tssop-8 unit: mm features r ds(on) =30m max . @ v gs =4v r ds(on) =45m max . @ v gs =2.5v absolute maxim um ratings t a = 25 paramet er sym bol rating unit dra in-sour ce v oltage v ds 20 v gate-sour ce voltage v gs 10 v dra in-cu rre nt -continuous i d 5 a -puls ed (note 1) i dm 20 a pow er dissipati on (note 2) p d 1.3 w thermal resi st ance,junct ion- to-am bient r ja 96 /w oper ating junct ion and storage temperature ra nge tj.ts tg -55 to 150 note: 1. pw 10s, duty cycl e 1% 2. moun ted on a c eramic board (1000 m m 2 0.8m m ) 1 : drain1 2 : source1 3 : source1 4 : gate1 5 : gate2 6 : source2 7 : source2 8 : drain2 d2 d1 s1 s1 g1 s2 s2 g2 4008-318-123 sales@twtysemi.com 1 of 2 http://www.twtysemi.com s m d ty p e m o s f e t FTD2011 smd type ic smd type smd type ic smd type product specification
s m d ty p e m o s f e t el ectrical characteris tics t a = 2 5 paramet er sym bol test c onditions min typ ma x unit dra in-sour ce b reakdow n voltage v dss v gs =0v,i d =1ma 20 v zero gate voltage dra in curr ent i dss v ds =20v,v gs =0v 1 a gate-body leakage i gss v gs = 8v,v ds =0v 10 a cutoff v oltage v gs(off) v ds =10v, i d =1ma 0.5 1.3 v v gs =4v,i d =4a 30 m v gs =2.5v,i d =2a 45 m on-state drain cu rre nt i d(on) v ds =5v,v gs =4.5v 18 a forw ard tra nsconductance g fs v ds =5v,i d =5a 5 s input capacitance c i ss 900 pf output capacitance c oss 260 pf rev erse transfer capa cit ance c rss 200 pf turn- on delay tim e t d(on) 15 ns rise tim e t r 150 ns turn- off delay tim e t d(off) 100 ns fall tim e t f 150 ns total gate charge q g 32 nc gate-s ource cha rge q gs 1.5 nc gate-d rain ch arge q gd 6 nc v ds = 10v, i d = 4a, v gs = 10v r ds(on) dra in- source on-state resis tance v dd =10v,i d =4a,v gs =4v, r l =2.5 ,r gen =50 v ds = 10v, v gs = 0v, f =1.0mhz FTD2011 mark ing mar king 2011 4008-318-123 sales@twtysemi.com 2 of 2 http://www.twtysemi.com smd type ic smd type smd type ic smd type product specification
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